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FMG1G100US60H
IGBT
FMG1G100US60H
Molding Type Module
General Description
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * * UL Certified No. E209204 Short Circuit rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A High Input Impedance Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2
Application
* * * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS
C1 E2
G1
E1
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C
@ AC 1minute
FMG1G100US60H 600 20 100 200 100 200 10 400 -40 to +150 -40 to +125 2500 2.0 2.0
Units V V A A A A us W C C V N.m N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2002 Fairchild Semiconductor Corporation
FMG1G100US60H Rev. A
FMG1G100US60H
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC=100mA IC = 100A, VGE = 15V 5.0 -6.0 2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---10840 963 228 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---25 50 80 110 1.6 2.4 4.0 25 60 80 240 1.7 4.3 6.0 -425 80 200 ---200 -----------500 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 100A, RG = 2.4, VGE = 15V Inductive Load, TC = 25C
VCC = 300 V, IC = 100A, RG = 2.4, VGE = 15V Inductive Load, TC = 125C
@ TC
VCC = 300 V, VGE = 15V = 100C
VCE = 300 V, IC = 100A, VGE = 15V
(c)2002 Fairchild Semiconductor Corporation
FMG1G100US60H Rev. A
FMG1G100US60H
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 100A TC = 100C TC = 25C TC = 100C IF = 100A di / dt = 200 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 1.8 90 130 9 12 405 780
Max. 2.8 -130 -12 -790 --
Units V ns A nC
Thermal Characteristics
Symbol RJC RJC RCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.05 -Max. 0.31 0.7 -190 Units C/W C/W C/W g
(c)2002 Fairchild Semiconductor Corporation
FMG1G100US60H Rev. A
FMG1G100US60H
240 210
250 Common Emitter 20V TC = 25 15V 12V
Collector Current, IC [A]
180 150 VGE = 10V 120 90 60
Collector Current, I C [A]
200
Common Emitter VGE = 15V TC = 25 TC = 125
150
100
50 30 0 0 2 4 6 8 0 0.3 1 10 20
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
120 Common Emitter V GE = 15V
V CC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]
4
100 200A
Load Current [A]
80
3 100A 2 IC = 50A
60
40
1
20
0 0 50 100 150
0
Duty cycle : 50% T C = 100 Power Dissipation = 130W 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter TC = 125
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8 200A 4 IC = 50A 0 0 4 8 12 16 20 100A
8 200A 4 IC = 50A 0 0 4 8 12 16 20 100A
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FMG1G100US60H Rev. A
FMG1G100US60H
30000
25000
Common Emitter V GE = 0V, f = 1MHz T C = 25 Cies
Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A
1000
TC = 25 C TC = 125 C
0
0
Capacitance [pF]
20000
Switching Time [ns]
Ton Tr
15000
100
10000 Coes 5000 Cres 0 0.5
10
1 10 30
1
10
Collector - Emitter Voltage, V CE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
3000 Common Emitter V CC = 300V, V GE = 15V IC = 100A T C = 25 T C = 125
Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A
Toff
TC = 25 C TC = 125 C
0
0
Switching Time [ns]
1000
Switching Loss [uJ]
10000
Eon
Eoff
Tf
Tf 100
1000
50 6 10 100
1
10 Gate Resistance, RG []
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter VCC = 300V, VGE = +/- 15V RG = 2.4 TC = 25 C TC = 125 C
0 0
Common Emitter VCC = 300V, VGE = +/- 15V IC = 100A TC = 25 C TC = 125 C
0 0
Switching Time [ns]
1000 100 Ton Switching Time [ns] Toff Tf
Tr
100
Tf
10 20 40 60 80 100 120 140 1 10 Gate Resistance, Rg [] Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FMG1G100US60H Rev. A
FMG1G100US60H
15
Common Emitter VCC = 300V, VGE = +/- 15V RG = 2.4 TC = 25 C
0
Gate - Emitter Voltage, VGE [ V ]
12
Common Emitter RL = 3 TC = 25 300 V
10000
TC = 125 C
0
Switching Loss [uJ]
Eoff Eon 1000
9 200 V V CC = 100 V
6
3
100 20 40 60 80 100 120 140
0 0 100 200 300 400 500
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500 IC MAX. (Pulsed) 100 IC MAX. (Continuous) 100us 1 50us 100
Collector Current, IC [A]
10
DC Operation
Collector Current, IC [A]
10
1
Single Nonrepetitive Pulse TC = 25 Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area V GE = 20V, T C = 100 C 1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
600
1
100
Thermal Response, Zthjc [/W]
Collector Current, I C [A]
0.1
10
1 Single Nonrepetitive Pulse T J 125 V GE = 15V RG = 2.4 0 100 200 300 400 500 600 700
0.01
T C = 25 IGBT : DIODE : 1E-3 10
-5
0.1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V CE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
(c)2002 Fairchild Semiconductor Corporation
Fig 18. Transient Thermal Impedance
FMG1G100US60H Rev. A
FMG1G100US60H
300
250
Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns]
Common Cathode V GE = 0V T C = 25 T C = 125
20
Forward Current, I F [A]
200
T rr Irr 10 T rr Irr
150
100
50
Common Cathode di/dt = 200A/ T C = 25 T C = 100 5 0 20 40 60 80 100
0 0 1 2 3 4
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2002 Fairchild Semiconductor Corporation
FMG1G100US60H Rev. A
FMG1G100US60H
Package Dimension
7PM-GA
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation FMG1G100US60H Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak
MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series
SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5

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